Publication

This page includes Japanese contents.

Before 1996 is in here

1997-1999

Papars, proceedings

84. Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-type Electron Cyclotron Resonance (ECR) Plasma
Jpn. J. Appl. Phys., Vol. 38, No. 11B, pp. L1293-L1295(1999)
J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, D. W. Gao, K. Furukawa, K. Muraoka

83. Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Devic Using a Sputtering-type Electron Cyclotron Resonance Plasma
Jpn. J. Appl. Phys., Vol. 38, No. 8, pp. 4868-4871(1999)
D. W. Gao, K. Furukawa, H. Nakashima, J. S. Gao, J. L. Wang, K. Muraoka

82. Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
Jpn. J. Appl. Phys., Vol. 38, No. 6A, pp. 3506-3507(1999)
S. Shigetomi, T. Ikari, H. Nakashima

81. MOS形トンネル電子エミッタ作製のためのCoSi2ゲート電極形成
九州大学大学院システム情報科学研究科報告, 第4巻, 第1号, pp. 99-102(1999)
張 依群, 権丈 淳, 佐道 泰造, 中島 寛, 鶴島 稔夫

80. Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-type ElectronCyclotron Resonance Plasma
Jpn. J. Appl. Phys., Vol. 38, No. 3A, pp. L220-L222(1999)
J. S. Gao, H. Nakashima, N. Sakai, D. W. Gao, J. L. Wang, K. Furukawa, K. Muraoka

79. Compositional and Structural Studies of Amorphous Silicon-Nitrogen Alloys Deposited at Room Temperature using a Sputtering-type Electron Cyclotron Resonance Microwave Plasma
Philo. Mag. B, Vol. 79, No. 1, pp. 137-148(1999)
Y. C. Liu, K. Furukawa, H. Nakashima, Y. Kashiwazaki, D. W. Gao, K. Uchino,K. Muraoka, H. Tsuzuki

78. Characterization of Phosphorus in Layer Semiconductor GaSe
J. Luminescence, Vol. 79, pp.79-84(1998)
S. Shigetomi, T. Ikari, H. Nakashima

77. Effects of Oxygen Content on Properties of Silicon Oxide Films Prepared at Room Temperature by Sputtering-type Electron Cyclotron Resonance Plasma
J. Appl. Phys., Vol.84, No.8, pp. 4579-4584(1998)
K. Furukawa, Y. Liu, H. Nakashima, D. W. Gao, Y. Kashiwazaki, K. Uchino, K. Muraoka, H. Tsuzuki

76. CoSi2ゲートMOSトンネル構造形成と評価
九州大学大学院システム情報科学研究科報告, 第3巻, 第2号, pp. 257-260(1998)
張 依群, 松下 篤志, 権丈 淳, 佐道 泰造, 中島 寛, 手島 昇, 森 紘, 鶴島 稔夫

75. Impurity Levels in p-Type Layered Semiconductor InSe Doped with Hg
phys. stat. sol. (b), Vol. 209, No. 1, pp. 93-99(1998)
S. Shigetomi, T. Ikari, H. Nakashima

74. Annealing Behavior of Deep Trap Level in p-GaTe
Jpn. J. Appl. Phys., Vol. 37, No. 6A, pp. 3282-3283(1998)
S. Shigetomi, T. Ikari, H. Nakashima

73. Si-SiO2界面の遷移領域の熱処理効果
九州大学大学院システム情報科学研究科報告, 第3巻, 第1号､111～116頁(1998)
張 依群, 菊竹 陽, 和田 修一, 仲重 隆史, 白 冬菊, 権丈 淳, 佐道 泰造, 中島 寛, 手島 昇, 森 紘, 鶴島 稔夫

72. Observation of Si Cluster Formation in SiO2 Films through Annealing Process using x-ray Photoelectron Spectroscopy and Infrared Techniques
Appl. Phys. Lett., Vol. 72, No. 6, pp. 725-727(1998)
K. Furukawa, Y. C. Liu, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka, H. Tsuzuki

71. Iron in p-type Silicon: A Comprehensive Model
Proc. 19th Int. Conf. Defects in Semiconductors, ( Materials Science Forum, Vols. 258-263, Trans. Tech. publ.), pp. 429-436
S. Zhao, A. L. Smith, S. H. Ahn, G. J. Norga, M. T. Platero, H. Nakashima, L. V. C. Assali, J. Michel, L. C. Kimerling

70. Deposition of High-quality Silicon Oxynitride Film at Low Temperature by using a Sputtering-type Electron Cyclotron Resonance Plasma
Jpn. J. Appl. Phys., Vol.36, No.12B, pp. L1692-1694(1997)
D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa,Y. C. Liu, T. Tsurushima

69. Effect of Preoxidation on Deposition of Thin Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type Electron Cyclotron Resonance Plasma
J. Appl. Phys., Vol. 82, No. 11, pp. 5680-5685(1997)
D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, K. Shibata, T. Tsurushima

68. In-situ Infrared Reflective Absorption Spectroscopy Characterization of SiN Films Deposited using Sputtering-type ECR Microwave Plasma
Appl. Surf. Sci., Vols. 121/122, pp. 233-236(1997)
Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka

67. In situ FT-IR Reflective Absorption Spectroscopy for Characterization of SiO2 Thin Films Deposited using Sputtering-type Electron Cyclotron Resonance Microwave Plasma
Appl. Surf. Sci., Vols. 121/122, pp. 228-232(1997)
K. Furukawa, Y. C. Liu, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka

66. Deep States in Silicon on Sapphire by Transient-Current Spectroscopy
J. Appl. Phys., Vol. 82, No. 10, pp. 5262-5264(1997)
T. Sadoh, A. Matsushita, Y.-Q. Zhang, D.-J. Bai, A. Baba, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

65. Deep Level of Iron-Hydrogen Complex in Silicon
J. Appl. Phys., Vol. 82, No. 8, pp. 3828-3831(1997)
T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

64. Tapered-Surface Etching of GaAs Utilizing Low-Energy Ion Bombardment Effect
Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 2, pp. 225-228(1997)
D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima

63. Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energitic Ions
Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 2, pp. 219-223(1997)
D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima

62. Low-temperature Deposition of High-Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma
J. Vac. Sci. and Tech. A, Vol. 15, No. 4, pp. 1951-1954(1997)
H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata and T. Tsurushima

61. Gettering of Fe by Aluminum in p-type Cz Silicon
Mater. Res. Soc. Symp. Proc., Vol. 442, 169-174(1997)
S. H. Ahn, S. Zhao, A. L. Smith, L. L. Chalfoun, M. Platero, H. Nakashima, L. C. Kimerling

60. Electrical and Optical Characteristics of the Layer Semiconductor p-GaSe Doped with Ag
phys. stat. sol. (a), Vol. 160, No. 1, pp. 159-164(1997)
S. Shigetomi, T. Ikari, H. Nakashima

59. 低エネルギーイオン照射によるシリコンの非晶質化
九州大学大学院システム情報科学研究科報告, 第2巻, 第1号､163～166頁(1997)
白 冬菊, 河瀬 智宏, 馬場 昭好, 権丈 淳, 佐道 泰造, 中島 寛, 森 紘, 鶴島 稔夫

58. Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions
Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 1, pp. 59-64(1997)
D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori,T. Tsurushima

57. Behavior of Radiation-Induced Defects and Amorphization in Silicon Crystal
Nucl. Instrum. & Methods B, Vol. 121, 299-301(1997)
A. Baba, D. Bai, T. Sadoh, A. Kenjo, H. Nakashima, H. Mori, T. Tsurushima

Before 1996 is in here

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