Publication

This page includes Japanese contents.

2017

Award

FY2017 IGSES School award (autumn), Wen Wei-Chen

Bronze prize, student poster session in Kyushu University Education Reform Symposium 2017, Takayuki MAEKURA

FY2016 IGSES School award, Hayato OKAMOTO PHOTO

FY2016 ASEM department award, Tomoki TATEYAMA PHOTO

第77回 応用物理学会秋季学術講演会 講演奨励賞 永冨 雄太, 岡本 隼人 PHOTO

Papars, proceedings

219. Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions
Phys. Chem. Chem. Phys. Vol. 20, Issue. 2, pp. 889-897(2018)
A. S. Aji, M. Izumoto, K. Suenaga, K. Yamamoto, H. Nakashima, and H. Ago

218. Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer
ECS transactions, Vol. 80, No. 4, pp. 97-106(2017)
H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang

217. Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), pp. 529-530(2017)
T. Sakaguchi, K. Akiyama, K. Yamamoto, D. Wang, and H. Nakashima

216. Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), pp. 505-506(2017)
W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima

215. Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes
Semiconductor Science and Technology Vol. 32, pp. 104001 (2017)
T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, K. Yamamoto, H. Nakashima, and D. Wang LINK

Conference presentations

H. Nakashima(Invited), H. Okamoto, K. Yamamoto, and D. Wang
Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer
232nd ECS meeting, 2017.10.2

T. Sakaguchi, K. Akiyama, K. Yamamoto, D. Wang, and H. Nakashima
Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs
2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.9.21

W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy
2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.9.20

板屋 航、仲江 航平、山本 圭介、王 冬、中島 寛
非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調(Ⅱ)
2017年第78回応用物理学会秋季学術講演会, 2017.9.8

坂口 大成、秋山 健太郎、山本 圭介、王 冬、中島 寛
メタルS/D型 Ge n-MOSFET のチャネル移動度の基板濃度依存性
2017年第78回応用物理学会秋季学術講演会, 2017.9.8

泉本 征憲、Adha Sukuma Aji、河原 憲治、山本 圭介、中島 寛、吾郷 浩樹
トンネルFET応用に向けた二次元半導体によるヘテロ構造体の合成
2017年第78回応用物理学会秋季学術講演会, 2017.9.5

W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy
2017年第78回応用物理学会秋季学術講演会, 2017.9.5

W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks
The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.5.18

K. Kudo, H. Higashi, M. Nakano, S. Yamada, K. Yamamoto, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya
Electrical properties of pseudo-single-crystalline Ge films grown on SiNx/SiO2
The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.5.18

T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes
The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.5.15

[講演奨励賞受賞記念講演]岡本 隼人、山本 圭介、王 冬、中島 寛
非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成
2017年第64回応用物理学会春季学術講演会, 2017.3.17

銭高 真人、古荘 仁久、山本 圭介、中島 寛、浜屋 宏平、金島 岳
La2O3/Ge(111)MIS構造に対するLu-doped La2O3 キャップ層の効果
2017年第64回応用物理学会春季学術講演会, 2017.3.16

[講演奨励賞受賞記念講演]永冨 雄太、織田 知輝、坂口 大成、山本 圭介、王 冬、中島 寛
ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構
2017年第64回応用物理学会春季学術講演会, 2017.3.16

前蔵 貴行、本山 千里、田中 健太郎、山本 圭介、中島 寛、王 冬
Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価
2017年第64回応用物理学会春季学術講演会, 2017.3.16

K. Yamamoto(Invited), H. Okamoto, D. Wang, and H. Nakashima
Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer
10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2017.2.13

T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes
10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2017.2.13

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