Publication

This page includes Japanese contents.

2018

Award

FY2017 ASEM department award, Kentaro TANAKA PHOTO

Papars, proceedings

225. Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy
J. Appl. Phys., Vol. 124, Issue 20 p. 205303 (2018)
W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima LINK

224. Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition
Semiconductor Science and Technology, Vol. 33, pp. 114011 (2018)
K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima LINK

223. Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), pp. 315-316
K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

222. Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), pp. 543-544
T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang

221. Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), pp. 847-848
K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di

220. Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM2018), pp. 871-872
T. Kanashima, H. Furusho, K. Takeyama, H. Nohira, K. Yamamoto, H. Nakashima

Conference presentations

W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks
12th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.12.6

K. Yamamoto(Invited), K. Akiyama, K. Iseri, W.-C. Wen, D. Wang, and H. Nakashima
Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation
12th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.12.6

Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
Border trap characterization using deep-level transient spectroscopy for GeO2/Gegate stacks grown by thermal oxidation and plasma oxidation
The Forum on the Science and Technology of Silicon Materials 2018, 2018.11.21

秋山 健太郎、井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛
電子ビーム蒸着によるGe上へのY酸化物系ゲート絶縁膜形成
2018年第79回応用物理学会秋季学術講演会, 2018.9.21

Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application
2018年第79回応用物理学会秋季学術講演会, 2018.9.20

仲江 航平、薛 飛達、山本 圭介、王 冬、中島 寛、Miao Zhang、Zhongying Xue、Zenfeng Di
Smart-Cut法を用いて作製したGe-on-Insulatorの極性変化
2018年第79回応用物理学会秋季学術講演会, 2018.9.19

後藤 太希、前蔵 貴行、仲江 航平、山本 圭介、中島 寛、王 冬、Miao Zhang、Zhongying Xue、Zenfeng Di
GOI基板を用いた非対称ー金属/Ge/金属構造光素子の作製・特性評価
2018年第79回応用物理学会秋季学術講演会, 2018.9.18

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application
2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.9.13

T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang
Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate
2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.9.13

K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di
Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator
2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.9.13

T. Kanashima, H. Furusho, K. Takeyama, H. Nohira, K. Yamamoto, H. Nakashima
Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments
2018 International Conference on Solid State Devices and Materiaals (SSDM2018), 2018.9.13

山本 圭介、光原 昌寿、王 冬、中島 寛
遷移金属窒化物を用いた金属/Geコンタクトの障壁制御
2018年第65回応用物理学会春季学術講演会, 2018.3.18

古荘 仁久, 高山 恭一, 山本 圭介, 中島 寛, 野平 博司, 金島 岳
溶液処理による結晶Lu-doped La2O3/La2O3/Ge(111)MIS界面特性改善
2018年第65回応用物理学会春季学術講演会, 2018.3.17

W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang and H. Nakashima
Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation
2018年第65回応用物理学会春季学術講演会, 2018.3.17

H. Nakashima, W.-C. Wen, K. Yamamoto and D. Wang
Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks
11th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.2.23

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