This page includes Japanese contents.



令和元年度 総合理工学府量子プロセス理工学専攻 専攻賞 岡 龍誠

Papars, proceedings

236. Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
AIP advances, Vol. 10, p. 065119 (2020)
W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima LINK

235. Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene
ACS NANO, in press (2020)
P. Solís-Fernández, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Lin, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, H. Ago LINK

234. High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis
Jpn. J. Appl. Phys., Vol. 59, p. SGGD17 (2020)
R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura LINK

Conference presentations