Publication

This page includes Japanese contents.

2019

Award

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Papars, proceedings

234. High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis
Jpn. J. Appl. Phys., accepted
R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

233. Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination
ECS transactions, Vol. 92, No. 4, pp. 3-10(2019)
K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di LINK

232. (Keynote)Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy
ECS transactions, Vol. 92, No. 4, pp. 3-10(2019)
H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang LINK

231. Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC
Extended Abstracts of the 2019 International Conference on Solid State Devices and@Materials (SSDM2019), pp. 315-316
R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

230. Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices
Extended Abstracts of the 2019 International Conference on Solid State Devices and@Materials (SSDM2019), pp. 315-316
K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

229. Electrical properties of p-channel thin-film transistors fabricated on high-mobility polycrystalline Ge on glass
Extended Abstracts of the 2019 International Conference on Solid State Devices and@Materials (SSDM2019), pp. 315-316
K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko

228. Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Appl. Phys. Lett., Vol. 114, p. 212107 (2019)
K. Moto, K. Yamamoto, T. Imajo, T. Suemasu, H. Nakashima, and K. Toko LINK

227. Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation
Jpn. J. Appl. Phys., Vol. 58, p. SBBA14 (2019)
K. Yamamoto, K. Nakae, D. Wang, H. Nakasima, Z. Xue, M. Zhang, and Z. Di LINK

226. Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate
Jpn. J. Appl. Phys., Vol. 58, p. SBBE05 (2019)
T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, and D. Wang LINK

Conference presentations

‰ª —´½AŽR–{ Œ\‰îA‰¤ “~A’†“‡ Š°A•H–Ø ”ɐbAì‘º Œ[‰î
3C-SiC MOSFET‚Ì臒l“dˆ³§Œä‚ÉŒü‚¯‚½SiO2/Al2O3ƒQ[ƒgƒXƒ^ƒbƒN’†‚̌Œè“d‰×EŠE–ʃ_ƒCƒ|[ƒ‹‚̉ðÍ
‘æ11‰ñ”¼“±‘̍ޗ¿EƒfƒoƒCƒXƒtƒH[ƒ‰ƒ€, 2019.12.21

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy
8th International Symposium on Control of Semiconductor Interfaces, 2019.11.28

H. Nakashima(keynote), W.-C. Wen, K. Yamamoto, D. Wang
Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy
236th ECS meeting, 2019.10.14

‰ª —´½AŽR–{ Œ\‰îA‰¤ “~A’†“‡ Š°A•H–Ø ”ɐbAì‘º Œ[‰î
SiO2/Al2O3â‰–Œ‚ð—L‚·‚é3C-SiC n-MOSƒLƒƒƒpƒVƒ^‚̌Œè“d‰×‚ÆŠE–ʃ_ƒCƒ|[ƒ‹‰ðÍ
2019”N‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, 2019.9.20

ŽR–{ Œ\‰îA‰ª —´½A‰¤ “~A’†“‡ Š°A•H–Ø ”ɐbAì‘º Œ[‰î
SiO2/Al2O3â‰–Œ‚ð—L‚·‚é3C-SiC n-MOSƒLƒƒƒpƒVƒ^‚Æn-MOSFET“®ì
2019”N‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, 2019.9.20

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy
2019”N‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, 2019.9.19

ˆä‹Ú Œ’lA‰· ˆÌ’CAŽR–{ Œ\‰îA‰¤ “~A’†“‡ Š°
V‹K“dŽqƒfƒoƒCƒX‰ž—p‚ÉŒü‚¯‚½GeƒQ[ƒgƒXƒ^ƒbƒN‚̒ቷ(<300‹C)Œ`¬
2019”N‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, 2019.9.19

–Γ¡ Œ’‘¾AŽR–{ Œ\‰îA¡é —˜•¶A––‰v ’A’†“‡ Š°A“sb ŒO
ŒÅ‘Š¬’·Ge”––Œ‚ÌTFT“®ìŽÀØ‚ÆSn“Y‰ÁŒø‰Ê‚ÌŒŸ“¢
2019”N‘æ80‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï, 2019.9.19

R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC
2019 International Conference on Solid State Devices and@Materials (SSDM2019)
2019.9.4

K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices
2019 International Conference on Solid State Devices and@Materials (SSDM2019)
2019.9.4

K. Moto, K. Yamamoto, T. Suemasu, H. Nakashima, K. Toko
Electrical properties of p-channel thin-film transistors fabricated on high-mobility polycrystalline Ge on glass
2019 International Conference on Solid State Devices and@Materials (SSDM2019)
2019.9.3

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy
2nd Joint ISTDM / ICSI 2019 Conference
10th International SiGe Technology and Device Meeting (ISTDM)
12th International Conference on Silicon Epitaxy and Heterostructures
2019.6.6

K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di
Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination
2nd Joint ISTDM / ICSI 2019 Conference
10th International SiGe Technology and Device Meeting (ISTDM)
12th International Conference on Silicon Epitaxy and Heterostructures
2019.6.4

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